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Core Technology of Multi-tier / Fine Pitch Wire Bond
Study Results
Bondability: Includes high performance of stitch pull/ball share, Squash ball bond formation & Stitch bond formation
Intermetallic : High coverage area & Complete intermetallic area
Wire neck control: No leaning wire on high looping & No wire neck damage on low looping
Workability study:
1. Special consideration for gold wire characteristics used for multi-tier looping, the gold wire with higher breaking load can avoid wire sweep. And gold wire with higher hardness has better shear strength.
2. On basic requirement for 1st/2nd bondability, HAZ is important for different devices. HAZ with excessive length can cause leaning, and shorter HAZ may result in crack at the bending position.
More Loop Mode for New Device Require…
‧Wire bonder suppliers develop increasingly more new advanced looping modes.
‧Advanced looping mode can reduce the yield loss of wire short with critical bonding diagram design.
Wire Bond Roadmap & Current Capability
Technology Items Production Available 2010

2011

2012
Wafer Technology Cu Low-k Cu Low-k Cu Low-k Cu Low-k Cu Low-k
BOAC BOAC BOAC BOAC BOAC
65nm 45 / 40 nm 45 / 40 nm 32nm 32nm
Au Wire In-line Bond Pad Pitch (um) 45 35 30 30 30
Wire Diameter (mil) 0.7 0.6 0.5 0.5 0.5
2 tiers Bond Pad Pitch (um) 50 45 35 35 35
Wire Diameter (mil) 0.8 0.7 0.6 0.6 0.6
3 tiers Bond Pad Pitch (um) 50 45 35 35 35
Wire Diameter (mil) 0.8 0.7 0.6 0.6 0.6
4 tiers Bond Pad Pitch (um) 55 55 45 40 35
Wire Diameter (mil) 0.8 0.8 0.7 0.7 0.6
Die-to-Die Bond Pad Pitch (um) 70 50 45 40 40
Wire Diameter (mil) 1 0.8 0.7 0.7 0.7
Fine Finger Pitch WB Finger Pitch/Top Width (um) 80 / 40 70 / 35 60 / 30 60 / 30 50 / 25
min WB loop height (um) 50 50 35 30 30
Conclusion
Wire Bond Technology is still the mainstream in the manufacturing in electronic packages, and has moved toward finer pitch in response to increased demands for more I/Os in smaller spaces. SPIL now has mature capability for implementation of various kinds of fine pitch wire bonds.
 
 
 
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